SI4825DY

MOSFET 30V 11.5A 3W

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SeekIC No. : 00166142 Detail

SI4825DY: MOSFET 30V 11.5A 3W

floor Price/Ceiling Price

Part Number:
SI4825DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 14 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 8.1 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 14 mOhms


Pinout

  Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±25
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID -11.5 -8.1 A
TA = 70°C -9.2 -6.5
Pulsed Drain Current(10 s Pulse Width) IDM -50
Continuous Source Current (Diode Conduction)a IS -2.5 -1.3
Maximum Power Dissipationa TA = 25°C PD 3.0 1.5 W
TA = 70°C 1.9 0.9
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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