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SI4831DY

MOSFET 30V 5A 2W

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SeekIC No. : 00165613 Detail

SI4831DY: MOSFET 30V 5A 2W

SI4831DY Data Sheet

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Part Number:
SI4831DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 45 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 45 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Pulsed Drain Current (MOSFET) VDS -30 V
Reverse Voltage (Schottky) VKA 30
Gate-Source Voltage (MOSFET) VGS ±20
Continuous Drain Current (TJ = 150)(MOSFET)a,b TA = 25

 

ID

 ±5 A
TA = 70 ±3.9
Pulsed Drain Current (MOSFET) IDM ±20
Continuous Source Current (MOSFET Diode Conduction)a.b IS -1.7
Average Foward Current (Schottky) IF 3
Pulsed Foward Current (Schottky) IFM 20
Maximum Power Dissipationa(MOSFET)a,b TA = 25 PD 2 W
TA = 70 1.18
Maximum Power Dissipationa(Schottky)a,b TA = 25   1.83
TA = 70 1.17
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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