MOSFET 30V 7.5A 2W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 7.5 A |
| Resistance Drain-Source RDS (on) : | 22 mOhms | Configuration : | Dual |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | SO-8 |

| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 7.5 | 5.7 | A |
| TA = 70 | 6.0 | 4.6 | |||
| Pulsed Drain Current | IDM | 30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | 0.9 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.0 | 1.1 | W |
| TA = 70 | 1.3 | 0.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||