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Si4835BDY

Features: · TrenchFET® Power MOSFET· Advanced High Cell Density ProcessApplication·Load Switches -Notebook PCs - Desktop PCsPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS ±25 Continuous Drai...

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SeekIC No. : 004490362 Detail

Si4835BDY: Features: · TrenchFET® Power MOSFET· Advanced High Cell Density ProcessApplication·Load Switches -Notebook PCs - Desktop PCsPinoutSpecifications Parameter Symbol 10 secs Steady State ...

Si4835BDY Data Sheet

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Part Number:
Si4835BDY
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· Advanced High Cell Density Process


Application

·Load Switches
  - Notebook PCs
  - Desktop PCs


Pinout

Connection Diagram


Specifications

Parameter
Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS −30 V
Gate-Source Voltage VGS ±25
Continuous Drain Current (TJ = 150)a TA = 25 ID -9.6 -7.4 A
TA = 70 -7.7 -5.9
Pulsed Drain Current IDM -50
continuous Source Current (Diode Conduction)a IS -2.1 -1.3
Maximum Power Dissipationa TA = 25 PD 2.5 1.5 W
TA = 70 1.6 0.9
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150



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