SI4835DY

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : - 8.8 A
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

• -8.8 A, -30 V. RDS(ON) = 0.020 @ VGS = -10 V
  RDS(ON) = 0.035 @ VGS = -4.5 V
• Extended VGSS range (±25V) for battery applications.
• Low gate charge (19nC typical).
• Fast switching speed.
• High performance trench technology for extremely
  low RDS(ON).
• High power and current handling capability.


Application

• Battery protection
• Load switch
• Motor drives


Pinout




Specifications

Symbol	Parameter	Si4822DY	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±25	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-8.8	A
		-50
PD	Power Dissipation for Dual Operation	2.5	W
	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	25	°C/W

Description

This P-Channel Logic Level MOSFET Si4835DY is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices of the Si4835DY are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.