MOSFET 40V 14A 3.1W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A |
| Resistance Drain-Source RDS (on) : | 9 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | SOIC-8 Narrow |

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|
Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 40 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 14 | 10 | A |
| TA = 70 | 11 | 8 | |||
| Pulsed Drain Current | IDM | 50 | |||
| continuous Source Current (Diode Conduction)a | IS | 2.8 | 1.4 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.1 | 1.56 | W |
| TA = 70 | 2.0 | 1.0 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||