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SI4852DY

MOSFET 30V 15A 3.1W

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SeekIC No. : 00164981 Detail

SI4852DY: MOSFET 30V 15A 3.1W

SI4852DY Data Sheet

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Part Number:
SI4852DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.7 A
Resistance Drain-Source RDS (on) : 12 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 8.7 A
Resistance Drain-Source RDS (on) : 12 mOhms


Features:

·LITTLE FOOT®Plus
·100% Rg Tested


Pinout

Connection Diagram


Specifications

Parameter   Symbol 10 sec Steady State Unit
Drain-Source Voltage (MOSFET) VDS 30 V
Reverse Voltage (Schottky) 30
Gate-Source Voltage (MOSFET) VGS ±20
Continuous Drain Current (TJ = 150 ) (MOSFET)a TA = 25 ID 11 8.7 A
TA = 70 9.0 7.0
Pulsed Drain Current (MOSFET)   IDM 50
Continuous Source Current (MOSFET Diode Conduction)a   IS 2.3 1.3
Average Foward Current (Schottky) IF 4.0 2.5
Pulsed Foward Current (Schottky) IFM 50
Maximum Power Dissipation (MOSFET)a TA = 25 PD 2.5 1.47 W
TA = 70 1.6 0.94
Maximum Power Dissipation (Schottky)a TA = 25 2.27 1.38
TA = 70 1.45 0.88
Operating Junction and Storage Temperature Range   TJ, Tstg -55 to 150



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