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SI4854DY

MOSFET 30V 6.9A 2W

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SeekIC No. : 00165864 Detail

SI4854DY: MOSFET 30V 6.9A 2W

SI4854DY Data Sheet

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Part Number:
SI4854DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 5.1 A
Resistance Drain-Source RDS (on) : 26 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 26 mOhms
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5.1 A


Features:

` LITTLE FOOT Plus-Dual TrenchFET® Power MOSFET Plus Integrated Schottky Diode
` PWM Optimized for Faster Swtiching


Application

` DC/DC Conversion for 3- to 6-A Output Current
    Notebook
    Desktop


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 6.9 5.1 A
TA = 70 5.5 4.1
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 1.7 0.9
Maximum Power Dissipationaa TA = 25 PD 2.0 1.1 W
TA = 70 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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