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Si4856DY

Features: ·TrenchFET® Power MOSFETS·100% RG TestedApplication·Buck Converter·Synchronous Rectifier - Secondary RectifierPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ ...

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SeekIC No. : 004490366 Detail

Si4856DY: Features: ·TrenchFET® Power MOSFETS·100% RG TestedApplication·Buck Converter·Synchronous Rectifier - Secondary RectifierPinoutSpecifications Parameter Symbol 10 secs Steady State Unit ...

Si4856DY Data Sheet

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Part Number:
Si4856DY
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

·TrenchFET® Power MOSFETS
·100% RG Tested


Application

·Buck Converter
·Synchronous Rectifier
   - Secondary Rectifier


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 17 12 A
TA = 70 14 9
Pulsed Drain Current IDM ±50
Continuous Source Current (Diode Conduction)a IS 2.7 1.40
Maximum Power Dissipationaa TA = 25 PD 3.0 1.6 W
TA = 70 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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