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SI4858DY

MOSFET 30V 20A

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SeekIC No. : 00164814 Detail

SI4858DY: MOSFET 30V 20A

SI4858DY Data Sheet

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Part Number:
SI4858DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 5.25 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 5.25 mOhms


Features:

`TrenchFET® Power MOSFET
`Optimized for "Low Side" Synchronous Rectifier Operation
`100% RG Tested


Application

· DC/DC Converters
· Synchronous Rectifiers


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 20 13 A
TA = 70 15 10
Pulsed Drain Current (10 s Pulse Width) IDM 60
Continuous Source Current (Diode Conduction)a IS 2.9 1.4
Maximum Power Dissipationaa TA = 25 PD 3.5 1.6 W
TA = 70 2.2 1
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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