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Si4860DY

Features: · TrenchFET Power MOSFETS· PWM Optimized for High Efficiency· 100% RG TestedApplication· Buck Converter- High Side- Low Side· Synchronous Rectifier- Secondary RectifierPinoutSpecifications Parameter Symbol Channel-1 Channel-2 Unit 10 secs Steady State Drain-Source Voltag...

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SeekIC No. : 004490367 Detail

Si4860DY: Features: · TrenchFET Power MOSFETS· PWM Optimized for High Efficiency· 100% RG TestedApplication· Buck Converter- High Side- Low Side· Synchronous Rectifier- Secondary RectifierPinoutSpecification...

Si4860DY Data Sheet

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Part Number:
Si4860DY
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

·  TrenchFET Power MOSFETS
·  PWM Optimized for High Efficiency
·  100% RG Tested


Application

·  Buck Converter
- High Side
- Low Side
·  Synchronous Rectifier
- Secondary Rectifier


Pinout

Connection Diagram


Specifications

Parameter Symbol Channel-1 Channel-2 Unit
10 secs Steady State
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 16 11 A
TA = 70°C 13 8
Pulsed Drain Current(10 s Pulse Width) IDM ±50
Continuous Source Current (Diode Conduction)a IS 3.0 1.4
Maximum Power Dissipationa TA = 25°C PD 3.5 1.6 W
TA = 70°C 2.2 1
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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