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SI4864DY

MOSFET 20V 25A 3.5W

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SeekIC No. : 00166012 Detail

SI4864DY: MOSFET 20V 25A 3.5W

SI4864DY Data Sheet

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Part Number:
SI4864DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 3.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 3.5 mOhms


Features:

`TrenchFET® Power MOSFETS: 2.5-V Rated
`Low 3.5-m rDS(on)
`PWM (Qgd and RG) Optimized


Application

· Low-Side MOSFET in Synchronous Buck DC/DC Converters in Servers and Routers


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 25 17 A
TA = 70 20 13
Pulsed Drain Current (10 s Pulse Width) IDM 60
Continuous Source Current (Diode Conduction)a IS 2.9 1.3
Maximum Power Dissipationaa TA = 25 PD 3.5 1.6 W
TA = 70 2.2 1
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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