Si4866BDY

The Si4866BDY is designed as one kind of N-Channel 12-V (D-S) MOSFET device that can be used in wide range of applications such as (1)synchronous rectifier; (2)point-of-load synchronous buck converter.Features of the Si4866BDY are:(1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFET; (3)100 % Rg and UIS Tested.

The absolute maximum ratings of the Si4866BDY can be summarized as:(1)Drain-Source Voltage: 12 V;(2)Gate-Source Voltage: +/- 8 V;(3)Continuous Drain Current (TJ = 150 °C): 21.5 to 12.9 A;(4)Pulsed Drain Current: 50 A;(5)Continuous Source-Drain Diode Current: 4.0 to 2.3 A;(6)Maximum Power Dissipation: 4.45 W or 1.6 W;(7)Operating Junction and Storage Temperature Range: -55 to 150 °C.

The electrical characteristics of the Si4866BDY can be summarized as:(1)Drain-Source Breakdown Voltage: 12 V;(2)VDS Temperature Coefficient: 12 mV/;(3)VGS(th) Temperature Coefficient: -3.5 mV/;(4)Gate-Source Threshold Voltage: 0.4 to 1.0 V;(5)Gate-Source Leakage: ±100 nA;(6)Zero Gate Voltage Drain Current: 1 uA to 10 uA;(7)On-State Drain Current: 20 A;(8)Drain-Source On-State Resistance: 0.0042 to 0.0053 ;(9)Forward Transconductance: 80 S. If you want to know more information about the Si4866BDY, please download the datasheet in www.seekic.com or www.chinaicmart.com .