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SI4866DY

MOSFET N-Ch 12 Volt 11 Amp

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SeekIC No. : 00159877 Detail

SI4866DY: MOSFET N-Ch 12 Volt 11 Amp

SI4866DY Data Sheet

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Part Number:
SI4866DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 12 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 5.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 12 V
Continuous Drain Current : 17 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 5.5 mOhms


Features:

· TrenchFET® Power MOSFETS
· PWM Optimized for High Efficiency
· Low Output Voltage
· 100% RG Tested


Application

·Synchronous Rectifier
·Point-of-Load Synchronous Buck Converter


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 17 11 A
TA = 70 14 8
Pulsed Drain Current IDM ±50
Continuous Source Current (Diode Conduction)a IS 2.7 1.40
Maximum Power Dissipationaa TA = 25 PD 3.0 1.6 W
TA = 70 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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