MOSFET 30V 15A 3.1W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 15 A |
| Resistance Drain-Source RDS (on) : | 7.5 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | SO-8 |

| Parameter | Symbol | Channel-1 | Channel-2 | Unit | |
| 10 secs | Steady State | ||||
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150°C)a | TA = 25°C | ID | 16 | 11 | A |
| TA = 70°C | 13 | 9 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | ±50 | |||
| Continuous Source Current (Diode Conduction)a | IS | 3.7 | 1.4 | ||
| Maximum Power Dissipationa | TA = 25°C | PD | 3.1 | 1.56 | W |
| TA = 70°C | 2.0 | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C | ||