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Si4874BDY

Features: · TrenchFET Power MOSFETS· 100% Rg TestedPinoutSpecifications Parameter Symbol Channel-1 Channel-2 Unit 10 secs Steady State Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 16 12 A TA = 70°C...

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SeekIC No. : 004490369 Detail

Si4874BDY: Features: · TrenchFET Power MOSFETS· 100% Rg TestedPinoutSpecifications Parameter Symbol Channel-1 Channel-2 Unit 10 secs Steady State Drain-Source Voltage VDS 30 V Gate-Sourc...

Si4874BDY Data Sheet

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Part Number:
Si4874BDY
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

·  TrenchFET Power MOSFETS
·  100% Rg Tested


Pinout

Connection Diagram


Specifications

Parameter Symbol Channel-1 Channel-2 Unit
10 secs Steady State
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 16 12 A
TA = 70°C 13 9
Pulsed Drain Current(10 s Pulse Width) IDM ±50
Avalanche Current L = 0 1 mH IAS 20
Single-Pulse Avalanche Energy EAS 20
Continuous Source Current (Diode Conduction)a IS 2.7 1.4
Maximum Power Dissipationa TA = 25°C PD 3.0 1.6 W
TA = 70°C 2.0 1
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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