MOSFET 20V 21A 3.6W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V |
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 21 A |
| Resistance Drain-Source RDS (on) : | 5 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | SO-8 |

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|
Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 21 | 14 | A |
| TA = 85 | 15 | 10 | |||
| Pulsed Drain Current | IDM | 50 | |||
| Avalanch Current | L = 0.1 mH | IAS | 42 | ||
| Single Avalanche Energy | EAS | 88 | mJ | ||
| continuous Source Current (Diode Conduction)a | IS | 3 | 1.3 | A | |
| Maximum Power Dissipationa | TA = 25 | PD | 3.6 | 1.6 | W |
| TA = 85 | 9 | 0.8 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||