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SI4886DY

MOSFET 30V 13A 2.95W

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SeekIC No. : 00165561 Detail

SI4886DY: MOSFET 30V 13A 2.95W

SI4886DY Data Sheet

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Part Number:
SI4886DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 10 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±25
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 13 9.5 A
TA = 70°C 10.5 7.6
Pulsed Drain Current(10 s Pulse Width) IDM ±50
Continuous Source Current (Diode Conduction)a IS 2.6 1.4
Maximum Power Dissipationa TA = 25°C PD 2.95 1.56 W
TA = 70°C 1.9 1.0
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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