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SI4890DY

MOSFET 30V 11A 2.5W

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SeekIC No. : 00166552 Detail

SI4890DY: MOSFET 30V 11A 2.5W

SI4890DY Data Sheet

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Part Number:
SI4890DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 12 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 11 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 12 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±25
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID ±11 A
TA = 70°C ±9
Pulsed Drain Current(10 s Pulse Width) IDM ±50
Continuous Source Current (Diode Conduction)a IS 2.3
Maximum Power Dissipationa TA = 25°C PD 2.5 W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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