SI4896DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 80 V
Continuous Drain Current : 9.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 16.5 mOhms


Pinout






Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		VDS	80		V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 150)a	TA = 25	ID	9.5	6.7	A
	TA = 70		7.6	5.4
Pulsed Drain Current		IDM	50
Avalanch Current	L = 0.1 mH	IAS	40
continuous Source Current (Diode Conduction)a		IS	2.8	1.4
Maximum Power Dissipationa	TA = 25	PD	3.1	1.56	W
	TA = 70		2.0	1.0
Operating Junction and Storage Temperature Range		TJ, Tstg	−55 to 150

Description

N-Channel 80-V (D-S) MOSFET Si4896DY