SI4920DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.023 Ohms
Package / Case : SOIC-8 Narrow


Features:

· 6 A, 30 V. RDS(ON) = 0.028 W @ VGS = 10 V
· RDS(ON) = 0.035 W @ VGS = 4.5 V.
· Fast switching speed.
· Low gate charge (typical 9 nC).
· High performance trench technology for extremely low
· RDS(ON).
· High power and current handling capability.


Pinout




Specifications

Symbol	Parameter	Si4920DY	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	6	A
		20
PD	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	1.6
		0.9
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	40	°C/W

Description

These N-Channel Logic Level MOSFETs Si4920DY are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery Si4920DY  powered applications where low in-line power loss and fast switching are required.