Features: · TrenchFET Power MOSFET· Advanced High Cell Density ProcessApplication· Load Switches- Notebook PCs- Desktop PCs- Game Stations· Battery SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 ...
Si4923DY: Features: · TrenchFET Power MOSFET· Advanced High Cell Density ProcessApplication· Load Switches- Notebook PCs- Desktop PCs- Game Stations· Battery SwitchPinoutSpecifications Parameter Symbol...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150°C)a | TA = 25°C | ID | -8.3 | -6.2 | A |
| TA = 70°C | -6.6 | -5.0 | |||
| Pulsed Drain Current | IDM | -30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | -0.9 | ||
| Maximum Power Dissipationa | TA = 25°C | PD | 2.0 | 1.1 | W |
| TA = 70°C | 1.3 | 0.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C | ||