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SI4967DY

MOSFET 12V 7.5A 2W

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SeekIC No. : 00166569 Detail

SI4967DY: MOSFET 12V 7.5A 2W

SI4967DY Data Sheet

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Part Number:
SI4967DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 12 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 7.5 A
Resistance Drain-Source RDS (on) : 23 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 7.5 A
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 12 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 23 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a, b TA = 25 ID -7.5 A
TA = 70 -6.1
Pulsed Drain Current IDM -30
Continuous Source Current (Diode Conduction)a, b IS -1.7
Maximum Power Dissipation a, b TA = 25 PD 2.0 W
TA = 70 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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