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SI4982DY

MOSFET 100V 2.6A 2W

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SeekIC No. : 00165722 Detail

SI4982DY: MOSFET 100V 2.6A 2W

SI4982DY Data Sheet

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Part Number:
SI4982DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.6 A
Resistance Drain-Source RDS (on) : 150 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Dual
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 150 mOhms
Continuous Drain Current : 2.6 A


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150 )a TA = 25 ID 2.6 A
TA = 70 2.1
Pulsed Drain Current IDM 20
Continuous Source Current (Diode Conduction)a IS 1.7
Maximum Power Dissipationa TA = 25 PD 2.0 W
TA = 70 1.3
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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