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Si4992EY

Features: · TrenchFET Power MOSFET· 175_C Maximum Junction Temperature· High-Efficiency PWM OptimizedApplicationAutomotive Such As:-- High-Side Switch-- Motor Drives-- 42-V BatteryPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 75 V Gate-S...

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SeekIC No. : 004490398 Detail

Si4992EY: Features: · TrenchFET Power MOSFET· 175_C Maximum Junction Temperature· High-Efficiency PWM OptimizedApplicationAutomotive Such As:-- High-Side Switch-- Motor Drives-- 42-V BatteryPinoutSpecificatio...

Si4992EY Data Sheet

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Part Number:
Si4992EY
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· TrenchFET Power MOSFET
· 175_C Maximum Junction Temperature
· High-Efficiency PWM Optimized




Application

Automotive Such As:
-- High-Side Switch
-- Motor Drives
-- 42-V Battery




Pinout

Connection Diagram




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 75 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175°C)a TA = 25°C ID 4.8 3.6 A
TA = 70°C 3.7 2.8
Avalanche Current L = 0.1 mH Las 8
Single Avalanche Energy (Duty Cycle 1%) EAS 3.2
Pulsed Drain Current IDM 20
Continuous Source Current (Diode Conduction)a IS 2 1.1
Maximum Power Dissipationa TA = 25°C PD 2.4 1.4 W
TA = 70°C 1.4 0.8
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175 °C





Description

Dual N-Channel 75-V (D-S) MOSFET Si4992EY




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