Si7232DN

DescriptionDual N-Channel 20-V (D-S) MOSFET The Si7232DN is designed as one kind of dual N-channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)DC/DC; (2)Notebook System Power; (3)POL. And this device has some points of features:(1)Halogen-free According to I...

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SeekIC No. : 004490653 Detail

Si7232DN: DescriptionDual N-Channel 20-V (D-S) MOSFET The Si7232DN is designed as one kind of dual N-channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)DC/DC; (2)Noteb...

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Part Number:
Si7232DN
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Description

Dual N-Channel 20-V (D-S) MOSFET

The Si7232DN is designed as one kind of dual N-channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)DC/DC; (2)Notebook System Power; (3)POL. And this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET-Power MOSFET; (3)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the Si7232DN can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 8 V;(3)Pulsed Drain Current: 40 A;(4)Single Pulse Avalanche Current: 15 mJ;(5)Single Pulse Avalanche Energy: 11 mJ;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the Si7232DN can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 22 mV/°C;(3)VGS(th) Temperature Coefficient: -3 mV/°C;(4)Gate-Source Threshold Voltage: 0.4 to 1 V;(5)Gate-Source Leakage: ±100 nA;(6)On-State Drain Current: 20 A;(7)Forward Transconductance: 47 S. If you want to know more information about the Si7232DN, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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