Si7994DP

The Si7994DP is designed as one kind of Dual N-Channel 30-V (D-S) MOSFET device that has some points of features: (1)system power DC/DC; (2)notebook; (3)server. Also this device can be used in wide range of applications such as broad - limited only by those applications requiring physical, electrical and/or materials specifications exceeding those indicated.

The absolute maximum ratings of the Si7994DP can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current (TJ = 150 °C): 60 to 16 A;(4)Pulsed Drain Current: 60 A;(5)Continuous Source-Drain Diode Current: 38 or 2.9 A;(6)Maximum Power Dissipation: 46 to 2.2 W;(7)Operating Junction and Storage Temperature Range: -55 to 150 °C;(8)Soldering Recommendations (Peak Temperature): 260 °C. If you want to know more information such as the electrical characteristics about the Si7994DP, please download the datasheet in www.seekic.com or www.chinaicmart.com.