Si9160

Features: · High Frequency Switching (up to 2 MHz)· Optimized Output Drive Current (350 mA)· Standby Mode· Wide Bandwidth Feedback Amplifier·Single-Cell LiIon and Three-cell NiCd or NiMH OperationPinoutSpecificationsVoltages Referenced to GND.VDD, VS . . . . . . . . . . . . . . . . . . . . . . . ....

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Si9160 Picture
SeekIC No. : 004490909 Detail

Si9160: Features: · High Frequency Switching (up to 2 MHz)· Optimized Output Drive Current (350 mA)· Standby Mode· Wide Bandwidth Feedback Amplifier·Single-Cell LiIon and Three-cell NiCd or NiMH OperationPi...

floor Price/Ceiling Price

Part Number:
Si9160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· High Frequency Switching (up to 2 MHz)
· Optimized Output Drive Current (350 mA)
· Standby Mode
· Wide Bandwidth Feedback Amplifier
·Single-Cell LiIon and Three-cell NiCd or NiMH Operation





Pinout

  Connection Diagram




Specifications

Voltages Referenced to GND.
VDD, VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.3 V
Linear Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VDD +0.3 V
Logic Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VDD +0.3 V
Peak Output Drive Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Power Dissipation (Package)a
16-Pin TSSOP (Q Suffix)a, b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 925 mW
Thermal Impedance (JA)a
16-Pin TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135/W
Notes
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 7.4 mW/ above 25.





Description

The Si9160 Controller for RF Power Amplifier Boost Converter is a fixed-frequency, pulse-width-modulated power conversion controller designed for use with the Si6801 application specific MOSFET. The Si9160 and the Si6801 are optimized for high efficiency switched-mode power conversion at 1 MHz and over. The device has an enable pin which can be used to put the converter in a low-current mode compatible with the standby mode of most cellular phones. A wide bandwidth feedback amplifier minimizes transient response time allowing the device to meet the instantaneous current demands of today's digital protocols. The input voltage range accommodates minimal size and cost battery pack configurations.

Frequency control in switching is important to noise management techniques in RF communications. The Si9160 is easily synchronized for high efficiency power conversion at frequencies in excess of 1 MHz.

Optimizing the controller and the synchronous FETs results in the highest conversion efficiency over a wide load range at the switching frequencies of interest (1 MHz or greater). It also minimizes the overshoot and gate ringing associated with drive current and gate charge mismatches. When disabled, the converter requires less than 330 A. This capability minimizes the impact of the converter on battery life when the phone is in the standby mode.

Finally, operating voltage is optimized for LiIon battery operation (2.7 V to 4.5 V) and can also be used with three-cell NiCd or NiMH (3 V to 3.6 V), as well as four-cell NiCd or NiMH (4 V to 4.8 V) battery packs.

The Si9160 is available in both standard and lead (Pb)-free packages.






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