Low Dropout (LDO) Regulators 350mA 3.3V
SI9181DQ-33-T1: Low Dropout (LDO) Regulators 350mA 3.3V
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| Input Voltage MAX : | 6 V | Output Voltage : | 3.3 V | ||
| Dropout Voltage (Max) : | 400 mV | Output Current : | 350 mA | ||
| Load Regulation : | 30 mV | Number of Outputs : | 1 | ||
| Output Type : | Fixed | Maximum Operating Temperature : | + 85 C | ||
| Mounting Style : | SMD/SMT | Package / Case : | TSSOP-8 |

The Si9181DQ-33-T1 is one member of the Si9181 family which is designed as the micropower 350-mA CMOS LDO regulator that can be used in (1)cellular phones; (2)laptop and palm computers; (3)PDA, digital still cameras applications. This device offers line/load transient response and ripple rejection superior to that of bipolar or BiCMOS LDO regulators, and includes an out-of-regulation error flag. Also it is available in both standard and lead (Pb)-free packages.
Features of the Si9181DQ-33-T1 are:(1)low 150-mV dropout at 350-mA load; (2)guaranteed 350-mA output current; (3)600-mA peak output current capability; (4)uses low esr ceramic output capacitor; (5)fast load and line transient response; (6)only 100-uV(rms) noise with noise bypass capacitor; (7)1-uA maximum shutdown current; (8)built-in short circuit and thermal protection; (9)out-of-regulation error flag (power good or POR).
The absolute maximum ratings of the Si9181DQ-33-T1 can be summarized as:(1)Input Voltage: 6.5 V;(2)SD Input Voltage, VSD: -0.3 V to VIN;(3)Output Current, IOUT: Short Circuit Protected;(4)Output Voltage, VOUT: -0.3 V to VO(nom) + 0.3 V;(5)Maximum Junction Temperature: 150;(6)Storage Temperature: -55 to 150;(7)ESD (Human Body Model): 2 kV;(8)Power Dissipation (Package): 833 mW. If you want to know more information about Si9181DQ-33-T1, please download the datasheet in www.seekic.com or www.chinaicmart.com .