SI9181DQ-33-T1

Low Dropout (LDO) Regulators 350mA 3.3V

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SI9181DQ-33-T1 Picture
SeekIC No. : 00523306 Detail

SI9181DQ-33-T1: Low Dropout (LDO) Regulators 350mA 3.3V

floor Price/Ceiling Price

US $ .25~.32 / Piece | Get Latest Price
Part Number:
SI9181DQ-33-T1
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1930
  • 1930~3000
  • Unit Price
  • $.32
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Input Voltage MAX : 6 V Output Voltage : 3.3 V
Dropout Voltage (Max) : 400 mV Output Current : 350 mA
Load Regulation : 30 mV Number of Outputs : 1
Output Type : Fixed Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT Package / Case : TSSOP-8    

Description

Number of Outputs : 1
Mounting Style : SMD/SMT
Output Type : Fixed
Maximum Operating Temperature : + 85 C
Output Voltage : 3.3 V
Load Regulation : 30 mV
Output Current : 350 mA
Dropout Voltage (Max) : 400 mV
Input Voltage MAX : 6 V
Package / Case : TSSOP-8


Pinout

  Connection Diagram


Description

The Si9181DQ-33-T1 is one member of the Si9181 family which is designed as the micropower 350-mA CMOS LDO regulator that can be used in (1)cellular phones; (2)laptop and palm computers; (3)PDA, digital still cameras applications. This device offers line/load transient response and ripple rejection superior to that of bipolar or BiCMOS LDO regulators, and includes an out-of-regulation error flag. Also it is available in both standard and lead (Pb)-free packages.

Features of the Si9181DQ-33-T1 are:(1)low 150-mV dropout at 350-mA load; (2)guaranteed 350-mA output current; (3)600-mA peak output current capability; (4)uses low esr ceramic output capacitor; (5)fast load and line transient response; (6)only 100-uV(rms) noise with noise bypass capacitor; (7)1-uA maximum shutdown current; (8)built-in short circuit and thermal protection; (9)out-of-regulation error flag (power good or POR).

The absolute maximum ratings of the Si9181DQ-33-T1 can be summarized as:(1)Input Voltage: 6.5 V;(2)SD Input Voltage, VSD: -0.3 V to VIN;(3)Output Current, IOUT: Short Circuit Protected;(4)Output Voltage, VOUT: -0.3 V to VO(nom) + 0.3 V;(5)Maximum Junction Temperature: 150;(6)Storage Temperature: -55 to 150;(7)ESD (Human Body Model): 2 kV;(8)Power Dissipation (Package): 833 mW. If you want to know more information about Si9181DQ-33-T1, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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