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Si9410BDY

Features: · TrenchFET® Power MOSFETSPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 8.1 6.2 A TA = 70 6.5 5.0 Pulsed Drain Current I...

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SeekIC No. : 004490965 Detail

Si9410BDY: Features: · TrenchFET® Power MOSFETSPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous...

Si9410BDY Data Sheet

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Part Number:
Si9410BDY
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS


Pinout

Connection Diagram


Specifications

Parameter
Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 8.1 6.2 A
TA = 70 6.5 5.0
Pulsed Drain Current IDM 30
continuous Source Current (Diode Conduction)a IS 2.1 1.2
Maximum Power Dissipationa TA = 25 PD 2.5 1.5 W
TA = 70 1.6 0.9
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150



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