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Part Number: Si9410DY*
Description: This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process tha...
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Si9410DY*
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DataSheet
General Description
Si9410DY* General Description
This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Si9410DY* Maximum Ratings
| Symbol | Parameter | Si4920DY | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
7.0 | A |
| 30 | |||
| PD | Power Dissipation for Dual Operation | 2.5 | W |
| Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c) |
1.2 | ||
| 1 | |||
| TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
| THERMAL CHARACTERISTICS | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | °C/W |
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 25 | °C/W |
Si9410DY* Features
· 7.0 A, 30 V. RDS(ON) = 0.030 W @ VGS = 10 V
RDS(ON) = 0.050 W @ VGS = 4.5 V
· Low gate charge.
· Fast switching speed.
· High power and current handling capability
RDS(ON) = 0.050 W @ VGS = 4.5 V
· Low gate charge.
· Fast switching speed.
· High power and current handling capability
Si9410DY* Typical Application
· Battery switch
· Load switch
· Motor cont
· Load switch
· Motor cont
Si9410DY* Connection Diagram
SI9100
PDF/DataSheet Download
- Datasheet: SI9100
- File Size: 92966 KB
- Manufacturer: VISAY [Vishay Siliconix]
- Click here to Download
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