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Si9410DY*

Features: · 7.0 A, 30 V. RDS(ON) = 0.030 W @ VGS = 10 V RDS(ON) = 0.050 W @ VGS = 4.5 V· Low gate charge.· Fast switching speed.· High power and current handling capabilityApplication· Battery switch· Load switch· Motor contPinoutSpecifications Symbol Parameter Si4920DY Units VDSS Drai...

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SeekIC No. : 004490966 Detail

Si9410DY*: Features: · 7.0 A, 30 V. RDS(ON) = 0.030 W @ VGS = 10 V RDS(ON) = 0.050 W @ VGS = 4.5 V· Low gate charge.· Fast switching speed.· High power and current handling capabilityApplication· Battery switc...

Si9410DY* Data Sheet

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Part Number:
Si9410DY*
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 7.0 A, 30 V. RDS(ON) = 0.030 W @ VGS = 10 V
  RDS(ON) = 0.050 W @ VGS = 4.5 V
· Low gate charge.
· Fast switching speed.
· High power and current handling capability


Application

· Battery switch
· Load switch
· Motor cont


Pinout

Connection Diagram


Specifications

Symbol Parameter Si4920DY Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed		 7.0 A
30
PD Power Dissipation for Dual Operation 2.5 W
Power Dissipation for Single Operation (Note 1a
(Note 1b)
(Note 1c)		 1.2
1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W



Description

This Si9410DY* N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

This Si9410DY* device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




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