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SI9422DY

MOSFET 200V 1.7A 2.5W

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SeekIC No. : 00166243 Detail

SI9422DY: MOSFET 200V 1.7A 2.5W

SI9422DY Data Sheet

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Part Number:
SI9422DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 0.42 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.42 Ohms
Continuous Drain Current : 1.7 A


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175°C)a TA = 25°C ID ±1.7 A
TA = 70°C ±1.3
Pulsed Drain Current(10 s Pulse Width) IDM ±12
Avalanche Current L = 0.1 mH IAS ±12.5
Single Avalanche Energy EAS 8
Continuous Source Current (Diode Conduction)a IS 2.1
Maximum Power DissipationaMOSFET)a, b TA = 25°C PD 2.5 W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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