SI9424DY

MOSFET Single P-Ch 20V/10V

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SeekIC No. : 00162256 Detail

SI9424DY: MOSFET Single P-Ch 20V/10V

floor Price/Ceiling Price

Part Number:
SI9424DY
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : - 8 A
Resistance Drain-Source RDS (on) : 0.019 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : - 8 A
Resistance Drain-Source RDS (on) : 0.019 Ohms


Features:

• -8.0 A, -20 V. RDS(on) = 0.024 W @ VGS = -4.5 V
                         RDS(on) = 0.032 W @ VGS = -2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.



Application

• DC/DC converter
• Load switch
• Battery Protection



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±10
V
ID
Drain Current - Continuous (Note 1a)
                     - Pulsed
-8.0
A
-50
PD
Power Dissipation for Single Operation (Note 1a)
                                                    (Note 1b)
                                                    (Note 1c)
2.5
W
1.2
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150



Description

This Si9424DY P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These Si9424DY devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationSI9424DY
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs24 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds 2260pF @ 10V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs33nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SI9424DY
SI9424DY
SI9424DYCT ND
SI9424DYCTND
SI9424DYCT



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