SI9430DY

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 50 mOhms


Features:

· -5.8 A, -20 V. R_DS(on) = 0.050 W @ V_GS = -10 V
                          R_DS(on) = 0.090 W @ V_GS = -4.5 V.
· Low gate charge.
· Fast switching speed.
· High power and current handling capability.


Application

· Battery switch
· Load switch
· Motor controls


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a)                      - Pulsed	-5.8	A
		-20
PD	Power Dissipation for Single Operation (Note 1a)                                                           (Note 1b)                                                           (Note 1c)	2.5	W
		1.2
		1.0
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This Si9430DY P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

This Si9430DY device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.