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MFG:VISHAY  Package Cooled:SOP-8  

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Part Number: Si9430DY

 

MFG: VISHAY

Package Cooled: SOP-8

 

Description: This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process tha...


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Si9430DY General Description


This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Si9430DY Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
 Drain-Source Voltage
-20
V
VGSS
 Gate-Source Voltage
±20
V
ID
 Drain Current - Continuous (Note 1a)
                     - Pulsed
-5.8
A
-20
PD
 Power Dissipation for Single Operation (Note 1a)
                                                          (Note 1b)
                                                          (Note 1c)
2.5
W
1.2
1.0
TJ, Tstg
 Operating and Storage Junction Temperature Range
-55 to +150

Si9430DY Features

· -5.8 A, -20 V. RDS(on) = 0.050 W @ VGS = -10 V
                          RDS(on) = 0.090 W @ VGS = -4.5 V.
· Low gate charge.
· Fast switching speed.
· High power and current handling capability.

Si9430DY Typical Application

· Battery switch
· Load switch
· Motor controls

Si9430DY Connection Diagram

Si9430DY Connection Diagram

Si9430DY datasheet

SI9430DY
PDF/DataSheet Download

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