MOSFET 30V 6.8A 3W
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.7 A |
| Resistance Drain-Source RDS (on) : | 40 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | SOIC-8 Narrow |

| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150 )a | TA = 25 | ID | 6.8 | 4.7 | A |
| TA = 70 | 5.5 | 3.7 | |||
| Pulsed Drain Current | IDM | 40 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.5 | 1.2 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.0 | 1.4 | W |
| TA = 70 | 1.9 | 0.9 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | |||