SiB912DK

The SiB912DK is designed as one kind of Dual N-Channel 20-V MOSFET device that can be used in wide range of applications such as (1)load switch, PA switch and battery switch for portable devices; (2)DC/DC converter. And this device has some points of features:(1)Halogen-free; (2)TrenchFET-Power MOSFET; (3)New Thermally Enhanced PowerPAK-SC-75 Package are Small Footprint Area and Low On-Resistance.

The absolute maximum ratings of the SiB912DK can be summarized as:(1)Drain-Source Voltage: +/-20 V;(2)Gate-Source Voltage: +/- 8 V;(3)Pulsed Drain Current: 5 A;(4)Maximum Power Dissipation: 0.7 to 3.1 W;(5)Continuous Drain Current (TJ = 150 °C): 1.4 to 1.5 A;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the SiB912DK can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 22 mV/°C;(3)VGS(th) Temperature Coefficient: -2.0 mV/°C;(4)Gate-Source Threshold Voltage: 0.40 to 1.0 V;(5)Gate-Source Leakage: ±100 nA;(6)On-State Drain Current: 5 A;(7)Forward Transconductance: 3 S. If you want to know more information about the SiB912DK, please download the datasheet in www.seekic.com or www.chinaicmart.com .