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SiHF830AL

Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and Current• Effective Coss specified• Lead (Pb)-free AvailableApplication• Switch Mo...

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SiHF830AL: Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and...

SiHF830AL Data Sheet

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Part Number:
SiHF830AL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss specified
• Lead (Pb)-free Available


Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed power switching


Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 30
V
Continuous Drain Current VGS at 10 V
TC = 25
TC = 100
ID
5.0
A
3.2
Pulsed Drain Current
IDM
20
A
Linear Derating Factor
0.59
W/
Single Pulse Avalanche Energy
EAS
230
mJ
Avalanche Current
IAR
5.0
A
Repetiitive Avalanche Energy
EAR
7.4
mJ
Maximum Power Dissipation TA = 25
TC = 25
PD
3.1
W
74
Peak Diode Recovery dV/dt
dv/dt
5.3
V/ns
Operating Junction and Storage Temperature Range
TJ,Tstg
- 55 to + 150
Soldering Recommendations (Peak Temperature) for 10 s
300



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