SiR440DP

The SiR440DP is designed as one kind of N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)fixed telecom; (2)high current dc-to-dc; (3)OR-ing. Also this device has some points of features:(1)Halogen-free; (2)TrenchFET Gen III Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested.

The absolute maximum ratings of the SiR440DP can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 37 or 60 A;(4)Pulsed Drain Current: 100 A;(5)Continuous Source-Drain Diode Current: 5.6 or 60 A;(6)Maximum Power Dissipation: 4.0 to 104 W;(7)Operating Junction and Storage Temperature Range: -55 to 150;(8)Soldering Recommendations (Peak Temperature): 260.

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 19 mV/;(3)VGS(th) Temperature Coefficient: -6.3 mV/;(4)Gate-Source Threshold Voltage: 1.0 to 2.5 V;(5)Gate-Source Leakage: +/-100 nA;(6)Zero Gate Voltage Drain Current: 1 or 10 uA;(7)On-State Drain Current: 30 A. If you want to know more information about the SiR440DP, please download the datasheet in www.seekic.com or www.chinaicmart.com .