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Part Number: T2316407A
Description: The T2316405A and T2316407A is a randomly accessed solid state memory containing 16,777,216 bits organ...


Description: The T2316405A and T2316407A is a randomly accessed solid state memory containing 16,777,216 bits organ...
The T2316405A and T2316407A is a randomly accessed solid state memory containing 16,777,216 bits organized in a x 4 configuration. It offers Fast Page mode with Extended Data Output (EDO).
During READ or WRITE cycles, each of the 4 memory bits (1 bit per I/O) is uniquely addressed through the 22 address bits, which are entered 11 bits (A0-A10) at a time. RAS latches the first 11 bits and CAS latches the latter 11 bits.
A READ or WRITE cycle is selected with the WE input. A logic HIGH on WE dictates READ mode while a logic LOW on WE dictates WRITE mode. During a WRITE cycle, data -in is latched by the falling edge of WE or CAS , whichever occurs last. When WE goes Low prior to CAS going LOW ( EARLY WRITE cycle), the output pins remain open (High-Z) until the next CAS cycle.
A Late Write or Read-Modify-Write occurs. When WE falls after CAS was taken LOW (Late Write cycle). OE must be taken HIGH to disable the data-outputs prior to applying input data.
The four data inputs and four data outputs are routed through four pins using common I/O, and pin direction is controlled by WE and OE .
|
Parameter |
Symbol |
Value |
Unit |
| Voltage on Any Pin Relative To Vss |
VT |
-0.5 to 4.6 |
V |
| Supply Voltage Relative To Vss |
Vcc |
-0.5 to 4.6 |
V |
| Short circuit Output Current |
Iout |
50 |
mA |
| Power Dissipation |
PT |
1 |
W |
| Operating Temperature |
TOPR |
0 to 70 |
°C |
| Storage Temperature |
Tstg |
-55 to 125 |
°C |
T2316407A
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