Transistors RF Bipolar Power RF Transistor
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| Maximum Operating Frequency : | 30 MHz | Collector- Emitter Voltage VCEO Max : | 55 V |
| Emitter- Base Voltage VEBO : | 4 V | Continuous Collector Current : | 40 A |
| Power Dissipation : | 330 W | Package / Case : | M177 |
| Packaging : | Tray |
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 110 | V |
| VCEO | Collector-Emitter Voltage | 55 | V |
| VEBO | Emitter-Base Voltage | 4.0 | V |
| IC | Device Current | 20 | A |
| PDISS | Power Dissipation (Theatsink 25°C) | 233 | W |
| TJ | Junction Temperature | +200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
The SD1728 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.