Features: • Low collector-emitter saturation voltage, VCE(sat) = -1.2V(max) @ IC = -3A• High collector-emitter sustaining voltage, BVCEO(SUS) = -100V(min)• High current gain-bandwidth product , fT = 3MHz(min) @ IC = -500mASpecifications Parameter Symbol Rating Unit ...
TIP32CE3: Features: • Low collector-emitter saturation voltage, VCE(sat) = -1.2V(max) @ IC = -3A• High collector-emitter sustaining voltage, BVCEO(SUS) = -100V(min)• High current gain-bandwi...
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| Parameter |
Symbol |
Rating |
Unit |
| Collector-Base Voltage |
VCBO |
-100 |
V |
| Collector-Emitter Voltage |
VCEO |
-100 |
V |
| Emitter-Base Voltage |
VEBO |
-5 |
V |
| Collector Current (DC) |
IC |
-3 |
A |
| Collector Current (Pulse) |
ICP |
-5(Note 1) | |
| Base Current |
IB |
-1 |
A |
| Power Dissipation @ TA=25 |
PD |
2 |
W |
| Power Dissipation @ TC=25 |
PD |
40 | |
| Thermal Resistance, Junction to Ambient |
RJA |
62.5 |
/W |
| Thermal Resistance, Junction to Case |
RJC |
3.125 |
/W |
| Junction Temperature |
Tj |
150 |
|
| Storage Temperature |
Tstg |
-55 to 150 |