TK10A60D(STA4,Q,M), US $ .54-.96 , Toshiba, TK10A60D(STA4,Q,M) DataSheet download, circuit diagram from SeekIC.com

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TK10A60D(STA4,Q,M): MOSFET MOSFET N-ch 600V 10A

TK10A60D(STA4,Q,M) Data Sheet

US $ .54~.96 / Piece | Get Latest Price

Part Number:: TK10A60D(STA4,Q,M)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2025/12/19

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Continuous Drain Current :	10 A	Resistance Drain-Source RDS (on) :	0.75 Ohms
Configuration :	Single	Mounting Style :	Through Hole
Package / Case :	TO-220 SIS	Packaging :	Tube

Description

Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.75 Ohms
Package / Case : TO-220 SIS

Parameters:

Technical/Catalog Information	TK10A60D(STA4,Q,M)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	750 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TK10A60D STA4,Q,M TK10A60DSTA4,Q,M TK10A60DSTA4QM ND TK10A60DSTA4QMND TK10A60DSTA4QM

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TK10A60D(STA4,Q,M)

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