TPCP8102(TE85L,F)

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Gate Charge (Qg) @ Vgs: 33nC @ 5V
Power - Max: -
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Current - Continuous Drain (Id) @ 25° C: 7.2A
Input Capacitance (Ciss) @ Vds: 2560pF @ 10V
Manufacturer: Toshiba
Supplier Device Package: PS-8 (2.9x2.8)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 3.6A, 4.5V


Parameters:

Technical/Catalog Information	TPCP8102(TE85L,F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	7.2A
Rds On (Max) @ Id, Vgs	18 mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) @ Vds	2560pF @ 10V
Power - Max	840mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33nC @ 5V
Package / Case	2-3V1K
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPCP8102 TE85L,F TPCP8102TE85L,F