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TPCP8201(TE85L,F)

MOSFET N-Ch 30V 4.2A 0.05 Ohms

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SeekIC No. : 00164329 Detail

TPCP8201(TE85L,F): MOSFET N-Ch 30V 4.2A 0.05 Ohms

TPCP8201(TE85L,F) Data Sheet

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Part Number:
TPCP8201(TE85L,F)
Mfg:
Toshiba
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.2 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Dual Dual Drain
Mounting Style : SMD/SMT Package / Case : PS-8-8
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.05 Ohms
Continuous Drain Current : 4.2 A
Package / Case : PS-8-8


Parameters:

Technical/Catalog InformationTPCP8201(TE85L,F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.2A
Rds On (Max) @ Id, Vgs50 mOhm @ 2.1A, 10V
Input Capacitance (Ciss) @ Vds 470pF @ 10V
Power - Max580mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / Case*
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPCP8201 TE85L,F
TPCP8201TE85L,F



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