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TPCP8601

Application• High DC current gain: hFE = 200 to 500 (IC = −0.6 A)• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)• High-speed switching: tf = 35 ns (typ.)PinoutSpecifications Characteristic Symbol Rating Unit Collector-base voltage V...

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TPCP8601: Application• High DC current gain: hFE = 200 to 500 (IC = −0.6 A)• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)• High-speed switching: tf = 35 ns (typ.)P...

TPCP8601 Data Sheet

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Part Number:
TPCP8601
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• High DC current gain: hFE = 200 to 500 (IC = −0.6 A)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 35 ns (typ.)


Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−7
V
Collector current DC (Note 1)
IC
−4.0
A
Pulse (Note 1 )
ICP
−7.0
Base current
IB
−0.5
A
Collector power
dissipation (t = 10s)		 t = 10s
Pc (Note 2)
3.3
W
DC
1.3
Junction temperature
Tj
150
Storage temperature range
Tstg
−55 to 150
Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device.
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: on the lower left of the marking indicates Pin 1.

* Weekly code (three digits):
                       Week of manufacture

Connection Diagram(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(lowest-order digit of the calendar year)


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