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TPD1030F

Features: • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.• Can directly drive a power load from a CMOS or TTL logic.• Built-in protection circuits against overvoltage (active clamp), overtemperature ...

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TPD1030F: Features: • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.• Can directly drive a power load from a CMOS or...

TPD1030F Data Sheet

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Part Number:
TPD1030F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
• Low Drain-Source ON-resistance: R DS (ON) = 0.6 (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25)
• Low Leakage Current: IDSS = 10 A (max) (@VIN = 0 V, VDS = 30 V, Tch = 25)
• Low Input Current: IIN = 300 A (max) (@VIN = 5 V, Tch = 25)
• 8-pin SOP package with embossed-tape packing.


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
V DS(DC)
40
V
Drain current
ID
Internally Limited
A
Input voltage
VIN
−0.3 to 7
V
Power dissipation (t = 10 s)
PD
2.0 (Note 3)
W
Single pulse active clamp capability
(Note 4)
EAS
10
mJ
Active clamp current
IAR
1
A
Repetitive active clamp capability
(Note 5)
EAR
0.2
mJ
Operating temperature
Topr
−40 to 110
Channel temperature
Tch
150
Storage temperature
Tstg
−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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