TPD2005F

Features: `A high-side switch array incorporating an N-channel power MOS FET (1.2 max.) and an 8-channel charge pump`Can directly drive a power load from a microprocessor.`Built-in protection against thermal shutdown protection and overcurrent protection`8-channel access enables space-saving desig...

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SeekIC No. : 004526282 Detail

TPD2005F: Features: `A high-side switch array incorporating an N-channel power MOS FET (1.2 max.) and an 8-channel charge pump`Can directly drive a power load from a microprocessor.`Built-in protection agains...

floor Price/Ceiling Price

Part Number:
TPD2005F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

`A high-side switch array incorporating an N-channel power MOS FET (1.2 max.) and an 8-channel charge pump
`Can directly drive a power load from a microprocessor.
`Built-in protection against thermal shutdown protection and overcurrent protection
`8-channel access enables space-saving design
`High operating voltage : 40 V
`Low on resistance : 1.2 max. (@VDD = 12 V, IO = 0.5 A (per channel))
`Supports parallel operation.
`Low operating current : 5 mA max. (@VDD = 40 V, VIN = 0 V)
`Supplied in an SSOP-24 package (300 mil) in embossed taping.



Pinout

  Connection Diagram


Specifications

Characteristic Symbol Rating Unit
Supply voltage VDD 45 V
Input voltage VIN − 0.5 ~ 7 V
Drain-source voltage VDS 60 V
Output current IO Internally
limited
A
Power dissipation
(operating all channels, ta = 25)
PT 0.8
1.2 (Note)
W
Single pulse avalanche energy EAS 10 mJ
Operating temperature Topr − 40 ~ 85
Junction temperature Tj 150
Storage temperature Tstg − 55 ~ 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




Description

The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power IC, TPD2005F can directly drive a power load from a CMOS or TTL logic circuit (such as an MPU). It offers overcurrent and overtemperature protection functions.




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