TQ1001J

The TQ1001J is designed as one kind of N-channel enhancement-mode MOS transistor arrays and is produced by Siliconix incorporated.The absolute maximum ratings of this TQ1001J can be summarized as:(1)drain-source voltage:30 V;(2)gate-source voltage:+/-20 V;(3)continuous drain current-single(Ta=25):0.56 A;(4)continuous drain current-single(Ta=100):0.36 A;(5)pulse drain current:1.5 A;(6)maximum power dissipation-single(Ta=25):1.3 W;(7)maximum power dissipation-single(Ta=100):0.52W;(8)maximum power dissipation-quad(Ta=25):2 W;(9)maximum power dissipation-quad(Ta=100):0.8 W;(10)operating junction & storage temperature range:-55 to 150;(11)lead temperature:300.

And the electrical specifications of the TQ1001J can be summarized as:(1)drain-source breakdown voltage:50 V;(2)gate threshold voltage:1.4 to 20 V;(3)gate-body leakage:+/-10 nA;(4)zero gate voltage drain current:1 uA(Vds=24 V,Vgs=0 V) and 100 uA(Tj=125);(5)on-state drain current:0.8 A;(6)forward transconductance:500 mS;(7)input capacitance:40 pF;(8)output capacitance:35 pF;(9)reverse transfer capacitance:10 pF;(10)turn-on time:10 ns and turn-off time:15 ns.