UF76145S3S

Features:

• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.0045W
• Temperature Compensating PSPICE™ Model
• Temperature Compensating SABER Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
             - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1). . . . . . . . . . . . . VDSS	30	V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . .VDGR	30	V
Gate to Source Voltage . . . . . . . . . . . . VGS	±16	V
Drain Current
Continuous (TA= 25, VGS = 10V) (Figure 2) . . . . ID	75	A
Continuous (TA= 100, VGS = 5V) . . . . . . . . . . ID	75	A
Continuous (TA= 100, VGS = 4.5V) . . . . . . . . ID	75	A
Pulsed Drain Current . . . . . . .. . . . . IDM	Figure 4
Pulsed Avalanche Rating. . . . . . . . . . EAS	Figures 6, 17, 18
Power Dissipation(Note 2) . . . . . . . . .. . . . PD	270	W
Derate Above 25 . . . . . . . . . . . . . . . . . .	2.17	W/
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG	-40 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL	300
Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg	260

Description

These N-Channel power MOSFETs UF76145S3S are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This UF76145S3S is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. UF76145S3S was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA76145.