US6K4

Features: 1) Two Nch MOSFETs are put in TUMT6 package.2) High-speed switching, Low On-resistance.3) 1.8V driveApplicationSwitchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±10 V Drain current Continuous ID ...

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SeekIC No. : 004538703 Detail

US6K4: Features: 1) Two Nch MOSFETs are put in TUMT6 package.2) High-speed switching, Low On-resistance.3) 1.8V driveApplicationSwitchingSpecifications Parameter Symbol Ratings UNIT Drain to Sou...

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Part Number:
US6K4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/12

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Product Details

Description



Features:

1) Two Nch MOSFETs are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) 1.8V drive



Application

Switching


Specifications

Parameter Symbol Ratings UNIT
Drain to Source Voltage VDSS 20 V
Gate to Source Voltage VGSS ±10 V
Drain current Continuous ID ±1.5 A
Pulsed IDP*1 ±3.0
Source current
(Body diode)
Continuous IS 0.6 A
Pulsed ISP*1 2.4
Total Power Dissipation PD*2 1.0 W / TOTAL
0.7 W / ELEMENT
Channel Temperature Tch 150
Storage Temperature Tstg 55 to +150
1 Pw10s, Duty cycle1%
2 Mounted on a ceramic board



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