Features: 1) Two Nch MOSFETs are put in TUMT6 package.2) High-speed switching, Low On-resistance.3) 1.8V driveApplicationSwitchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±10 V Drain current Continuous ID ...
US6K4: Features: 1) Two Nch MOSFETs are put in TUMT6 package.2) High-speed switching, Low On-resistance.3) 1.8V driveApplicationSwitchingSpecifications Parameter Symbol Ratings UNIT Drain to Sou...
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| Parameter | Symbol | Ratings | UNIT | |
| Drain to Source Voltage | VDSS | 20 | V | |
| Gate to Source Voltage | VGSS | ±10 | V | |
| Drain current | Continuous | ID | ±1.5 | A |
| Pulsed | IDP*1 | ±3.0 | ||
| Source current (Body diode) |
Continuous | IS | 0.6 | A |
| Pulsed | ISP*1 | 2.4 | ||
| Total Power Dissipation | PD*2 | 1.0 | W / TOTAL | |
| 0.7 | W / ELEMENT | |||
| Channel Temperature | Tch | 150 | ||
| Storage Temperature | Tstg | 55 to +150 | ||